NCEP035N10M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP035N10M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO-220

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NCEP035N10M datasheet

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NCEP035N10M

NCEP035N10M, NCEP035N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO

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 ncep035n12.pdf pdf_icon

NCEP035N10M

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

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 ncep035n12vd.pdf pdf_icon

NCEP035N10M

NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin

 5.3. Size:346K  ncepower
 ncep035n12d.pdf pdf_icon

NCEP035N10M

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M, NCEP033N85M, IRFB3607, NCEP035N12, NCEP035N12D, NCEP035N12VD, NCEP035N60AG, NCEP035N60AK, NCEP035N60K, NCEP035N72, NCEP035N72GU