All MOSFET. NCEP035N10M Datasheet

 

NCEP035N10M Datasheet and Replacement


   Type Designator: NCEP035N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220
 

 NCEP035N10M substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCEP035N10M Datasheet (PDF)

 ..1. Size:397K  ncepower
 ncep035n10m.pdf pdf_icon

NCEP035N10M

NCEP035N10M, NCEP035N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO

 5.1. Size:346K  ncepower
 ncep035n12.pdf pdf_icon

NCEP035N10M

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 5.2. Size:309K  ncepower
 ncep035n12vd.pdf pdf_icon

NCEP035N10M

NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin

 5.3. Size:346K  ncepower
 ncep035n12d.pdf pdf_icon

NCEP035N10M

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

SHOW MORE

Datasheet: NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , NCEP033N85M , AON7506 , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU .

History: IRLI2203N | CRSD082N10L2 | QM4014S | CRSM053N08N | BF511 | 9N90 | STB80NF06

Keywords - NCEP035N10M MOSFET datasheet

 NCEP035N10M cross reference
 NCEP035N10M equivalent finder
 NCEP035N10M lookup
 NCEP035N10M substitution
 NCEP035N10M replacement

 

 
Back to Top

 


 
.