NCEP035N10M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP035N10M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 240 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 150 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 137 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 820 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP035N10M
NCEP035N10M Datasheet (PDF)
ncep035n10m.pdf
NCEP035N10M, NCEP035N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO
ncep035n12vd.pdf
NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n60ag.pdf
Pb Free Producthttp://www.ncepower.com NCEP035N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AG uses Super Trench II technology that is V =60V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @
ncep035n85 ncep035n85d.pdf
NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
ncep035n60k.pdf
http://www.ncepower.com NCEP035N60KNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP035N60K uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep035n60ak.pdf
http://www.ncepower.com NCEP035N60AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AK uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5VDS(ON)
ncep035n72gu.pdf
NCEP035N72GUNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =72V,I =120ADS Dswitching performance. Both conduction and switching powerR =2.4m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep035n72.pdf
NCEP035N72NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat
ncep035n85gu.pdf
http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel
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