FQB47P06 Todos los transistores

 ..1. Size:1207K  fairchild semi
 fqb47p06 fqi47p06.pdf

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especi

 ..2. Size:1140K  onsemi
 fqb47p06.pdf

FQB47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 m Features -47 A, -60 V, RDS(on) = 26 m (Max.) @ VGS = .10 V, Description ID = -23.5 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 84 nC) produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 320 pF) technology has been esp

 0.1. Size:1192K  fairchild semi
 fqb47p06tm am002 fqi47p06tu.pdf

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especi