FQB47P06 Datasheet and Replacement
Type Designator: FQB47P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO263 D2PAK
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FQB47P06 Datasheet (PDF)
fqb47p06 fqi47p06.pdf
October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi
fqb47p06.pdf
FQB47P06P-Channel QFET MOSFET-60 V, -47 A, 26 mFeatures -47 A, -60 V, RDS(on) = 26 m (Max.) @ VGS = .10 V,DescriptionID = -23.5 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 84 nC)produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 320 pF)technology has been esp
fqb47p06tm am002 fqi47p06tu.pdf
October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PSMN2R5-40YLD | IRFHM792PBF | CED05N8 | AON6794 | SSG4490N | BUZ84 | BL10N70-A
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History: PSMN2R5-40YLD | IRFHM792PBF | CED05N8 | AON6794 | SSG4490N | BUZ84 | BL10N70-A
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