Справочник MOSFET. FQB47P06

 

FQB47P06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB47P06
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FQB47P06

 

 

FQB47P06 Datasheet (PDF)

 ..1. Size:1207K  fairchild semi
fqb47p06 fqi47p06.pdf

FQB47P06
FQB47P06

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

 ..2. Size:1140K  onsemi
fqb47p06.pdf

FQB47P06
FQB47P06

FQB47P06P-Channel QFET MOSFET-60 V, -47 A, 26 mFeatures -47 A, -60 V, RDS(on) = 26 m (Max.) @ VGS = .10 V,DescriptionID = -23.5 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 84 nC)produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 320 pF)technology has been esp

 0.1. Size:1192K  fairchild semi
fqb47p06tm am002 fqi47p06tu.pdf

FQB47P06
FQB47P06

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

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