NCEP035N12VD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP035N12VD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 190 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 870 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: TO-263
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NCEP035N12VD Datasheet (PDF)
ncep035n12vd.pdf
NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep035n12.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918