NCEP035N12VD PDF and Equivalents Search

 

NCEP035N12VD Specs and Replacement


   Type Designator: NCEP035N12VD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-263
 

 NCEP035N12VD substitution

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NCEP035N12VD datasheet

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NCEP035N12VD

NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

 4.1. Size:346K  ncepower
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NCEP035N12VD

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.2. Size:346K  ncepower
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NCEP035N12VD

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.3. Size:346K  ncepower
 ncep035n12 ncep035n12d.pdf pdf_icon

NCEP035N12VD

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

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Detailed specifications: NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , NCEP033N85M , NCEP035N10M , NCEP035N12 , NCEP035N12D , CS150N03A8 , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL .

Keywords - NCEP035N12VD MOSFET specs

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