Справочник MOSFET. NCEP035N12VD

 

NCEP035N12VD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP035N12VD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 190 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 213 nC
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 870 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCEP035N12VD

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP035N12VD Datasheet (PDF)

 ..1. Size:309K  ncepower
 ncep035n12vd.pdf pdf_icon

NCEP035N12VD

NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin

 4.1. Size:346K  ncepower
 ncep035n12.pdf pdf_icon

NCEP035N12VD

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:346K  ncepower
 ncep035n12d.pdf pdf_icon

NCEP035N12VD

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.3. Size:346K  ncepower
 ncep035n12 ncep035n12d.pdf pdf_icon

NCEP035N12VD

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

ПОКАЗАТЬ ЕЩЁ

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History: IPA600N25NM3S | IPA60R145CFD7

 

 
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