NCEP039N10F Todos los transistores

 

NCEP039N10F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP039N10F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 102 nC
   trⓘ - Tiempo de subida: 11.5 nS
   Cossⓘ - Capacitancia de salida: 585 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO-220F
 

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NCEP039N10F Datasheet (PDF)

 ..1. Size:314K  ncepower
 ncep039n10f.pdf pdf_icon

NCEP039N10F

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:1515K  ncepower
 ncep039n10m.pdf pdf_icon

NCEP039N10F

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 4.2. Size:1810K  ncepower
 ncep039n10d.pdf pdf_icon

NCEP039N10F

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

 4.3. Size:1515K  ncepower
 ncep039n10md.pdf pdf_icon

NCEP039N10F

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

MOSTRAR MÁS

Otros transistores... NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , P0903BDG , NCEP040N10GU , NCEP040N10M , NCEP040N12 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD .

History: HSBB3214 | NCEP045N85G | HSBB4115 | STH240N75F3-2 | STB25NM60N-1 | NCE25P60K | WST6045

 

 
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