NCEP039N10F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP039N10F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 585 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm

Encapsulados: TO-220F

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NCEP039N10F datasheet

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NCEP039N10F

NCEP039N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

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NCEP039N10F

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t

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 ncep039n10d.pdf pdf_icon

NCEP039N10F

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V

 4.3. Size:1515K  ncepower
 ncep039n10md.pdf pdf_icon

NCEP039N10F

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t

MOSTRAR MÁS

Otros transistores... NCEP035N60AK, NCEP035N60K, NCEP035N72, NCEP035N72GU, NCEP035N85, NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, IRF1407, NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD