NCEP039N10F Datasheet. Specs and Replacement

Type Designator: NCEP039N10F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 585 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO-220F

NCEP039N10F substitution

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NCEP039N10F datasheet

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NCEP039N10F

NCEP039N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒

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NCEP039N10F

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t... See More ⇒

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NCEP039N10F

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V ... See More ⇒

 4.3. Size:1515K  ncepower
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NCEP039N10F

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t... See More ⇒

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Detailed specifications: NCEP035N60AK, NCEP035N60K, NCEP035N72, NCEP035N72GU, NCEP035N85, NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, IRF1407, NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD

Keywords - NCEP039N10F MOSFET specs

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