All MOSFET. NCEP039N10F Datasheet

 

NCEP039N10F Datasheet and Replacement


   Type Designator: NCEP039N10F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 585 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-220F
 

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NCEP039N10F Datasheet (PDF)

 ..1. Size:314K  ncepower
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NCEP039N10F

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:1515K  ncepower
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NCEP039N10F

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

 4.2. Size:1810K  ncepower
 ncep039n10d.pdf pdf_icon

NCEP039N10F

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V

 4.3. Size:1515K  ncepower
 ncep039n10md.pdf pdf_icon

NCEP039N10F

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t

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Datasheet: NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , IRF1407 , NCEP040N10GU , NCEP040N10M , NCEP040N12 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD .

History: 2SK2040 | 2SK2051-S

Keywords - NCEP039N10F MOSFET datasheet

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