NCEP039N10F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP039N10F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 62 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11.5 ns
Cossⓘ - Выходная емкость: 585 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO-220F
Аналог (замена) для NCEP039N10F
NCEP039N10F Datasheet (PDF)
ncep039n10f.pdf

NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati
ncep039n10m.pdf

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t
ncep039n10d.pdf

NCEP039N10, NCEP039N10DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , typical (TO-263)@ V
ncep039n10md.pdf

Pb Free ProductNCEP039N10M, NCEP039N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.65m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.5m , t
Другие MOSFET... NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , P0903BDG , NCEP040N10GU , NCEP040N10M , NCEP040N12 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD .
History: FBM85N80B
History: FBM85N80B



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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