NCEP048N85D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP048N85D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 71 nC
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 740 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: TO-263
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NCEP048N85D Datasheet (PDF)
ncep048n85 ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85m ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85m.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918