All MOSFET. NCEP048N85D Datasheet

 

NCEP048N85D Datasheet and Replacement


   Type Designator: NCEP048N85D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-263
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NCEP048N85D Datasheet (PDF)

 ..1. Size:835K  ncepower
 ncep048n85 ncep048n85d.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 ..2. Size:835K  ncepower
 ncep048n85d.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.1. Size:761K  ncepower
 ncep048n85md.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.2. Size:835K  ncepower
 ncep048n85.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

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History: SM1A22NSFP | MC08N005C | IRLR024 | CED05N8 | AP80SL990BI | AON6794 | BL10N70-A

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