NCEP048N85D datasheet, аналоги, основные параметры

Наименование производителя: NCEP048N85D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 61 ns

Cossⓘ - Выходная емкость: 740 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCEP048N85D

- подборⓘ MOSFET транзистора по параметрам

 

NCEP048N85D даташит

 ..1. Size:835K  ncepower
 ncep048n85 ncep048n85d.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 ..2. Size:835K  ncepower
 ncep048n85d.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 4.1. Size:761K  ncepower
 ncep048n85md.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 4.2. Size:835K  ncepower
 ncep048n85.pdf pdf_icon

NCEP048N85D

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

ПОКАЗАТЬ ЕЩЁ

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