NCEP050N12AGU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP050N12AGU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 391 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN5X6-8L

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NCEP050N12AGU datasheet

 ..1. Size:304K  ncepower
 ncep050n12agu.pdf pdf_icon

NCEP050N12AGU

NCEP050N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are

 4.1. Size:1315K  ncepower
 ncep050n12d.pdf pdf_icon

NCEP050N12AGU

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

 4.2. Size:1315K  ncepower
 ncep050n12.pdf pdf_icon

NCEP050N12AGU

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

 4.3. Size:323K  ncepower
 ncep050n12gu.pdf pdf_icon

NCEP050N12AGU

NCEP050N12GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

MOSTRAR MÁS

Otros transistores... NCEP048N85MD, NCEP048NH150, NCEP048NH150D, NCEP048NH150T, NCEP050N10M, NCEP050N10MD, NCEP050N10MG, NCEP050N12, K2611, NCEP050N12D, NCEP050N12GU, NCEP050N85G, NCEP050N85M, NCEP053N85GU, NCEP055N10, NCEP055N10D, NCEP055N10G