Справочник MOSFET. NCEP050N12AGU

 

NCEP050N12AGU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP050N12AGU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 391 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP050N12AGU

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP050N12AGU Datasheet (PDF)

 ..1. Size:304K  ncepower
 ncep050n12agu.pdf pdf_icon

NCEP050N12AGU

NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are

 4.1. Size:1315K  ncepower
 ncep050n12d.pdf pdf_icon

NCEP050N12AGU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.2. Size:1315K  ncepower
 ncep050n12.pdf pdf_icon

NCEP050N12AGU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.3. Size:323K  ncepower
 ncep050n12gu.pdf pdf_icon

NCEP050N12AGU

NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP048N85MD , NCEP048NH150 , NCEP048NH150D , NCEP048NH150T , NCEP050N10M , NCEP050N10MD , NCEP050N10MG , NCEP050N12 , IRF9640 , NCEP050N12D , NCEP050N12GU , NCEP050N85G , NCEP050N85M , NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G .

 

 
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