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NCEP050N12AGU Datasheet and Replacement


   Type Designator: NCEP050N12AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 96 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 391 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6-8L
 

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NCEP050N12AGU Datasheet (PDF)

 ..1. Size:304K  ncepower
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NCEP050N12AGU

NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are

 4.1. Size:1315K  ncepower
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NCEP050N12AGU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.2. Size:1315K  ncepower
 ncep050n12.pdf pdf_icon

NCEP050N12AGU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.3. Size:323K  ncepower
 ncep050n12gu.pdf pdf_icon

NCEP050N12AGU

NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

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Datasheet: NCEP048N85MD , NCEP048NH150 , NCEP048NH150D , NCEP048NH150T , NCEP050N10M , NCEP050N10MD , NCEP050N10MG , NCEP050N12 , IRF9640 , NCEP050N12D , NCEP050N12GU , NCEP050N85G , NCEP050N85M , NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G .

History: SI7374DP

Keywords - NCEP050N12AGU MOSFET datasheet

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