NCEP050N12D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP050N12D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 220 W
Voltaje máximo drenador - fuente |Vds|: 120 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 130 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 112 nC
Tiempo de subida (tr): 11.5 nS
Conductancia de drenaje-sustrato (Cd): 450 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET NCEP050N12D
NCEP050N12D Datasheet (PDF)
ncep050n12 ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12gu.pdf
NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
ncep050n12agu.pdf
NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are
ncep050n10m.pdf
NCEP050N10MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep050n10mg.pdf
NCEP050N10MGNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combina
ncep050n10md.pdf
NCEP050N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HGB027N12S