NCEP050N12D Datasheet. Specs and Replacement

Type Designator: NCEP050N12D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-263

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NCEP050N12D datasheet

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NCEP050N12D

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi... See More ⇒

 ..2. Size:1315K  ncepower
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NCEP050N12D

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi... See More ⇒

 4.1. Size:1315K  ncepower
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NCEP050N12D

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi... See More ⇒

 4.2. Size:323K  ncepower
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NCEP050N12D

NCEP050N12GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio... See More ⇒

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Detailed specifications: NCEP048NH150, NCEP048NH150D, NCEP048NH150T, NCEP050N10M, NCEP050N10MD, NCEP050N10MG, NCEP050N12, NCEP050N12AGU, EMB04N03H, NCEP050N12GU, NCEP050N85G, NCEP050N85M, NCEP053N85GU, NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M

Keywords - NCEP050N12D MOSFET specs

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