NCEP050N12D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP050N12D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 11.5 ns
Cossⓘ - Выходная емкость: 450 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEP050N12D
NCEP050N12D Datasheet (PDF)
ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12 ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12gu.pdf
NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
ncep050n12agu.pdf
NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918