NCEP065N10AGU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP065N10AGU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 316 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN5X6-8L

 Búsqueda de reemplazo de NCEP065N10AGU MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP065N10AGU datasheet

 ..1. Size:331K  ncepower
 ncep065n10agu.pdf pdf_icon

NCEP065N10AGU

http //www.ncepower.com NCEP065N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power

 2.1. Size:330K  ncepower
 ncep065n10ag.pdf pdf_icon

NCEP065N10AGU

NCEP065N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m

 3.1. Size:362K  ncepower
 ncep065n10ak.pdf pdf_icon

NCEP065N10AGU

NCEP065N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

 4.1. Size:767K  ncepower
 ncep065n10gu.pdf pdf_icon

NCEP065N10AGU

http //www.ncepower.com NCEP065N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10GU uses Super Trench II technology that is V =100V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =5.9m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R prod

MOSTRAR MÁS

Otros transistores... NCEP060N10F, NCEP060N10G, NCEP060N60G, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G, NCEP065N10, NCEP065N10AG, 10N60, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, NCEP068N10K, NCEP070N10AGU, NCEP070N10GU, NCEP070N12