NCEP065N10AGU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP065N10AGU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 76 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 316 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP065N10AGU
NCEP065N10AGU Datasheet (PDF)
ncep065n10agu.pdf
http://www.ncepower.com NCEP065N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power
ncep065n10ag.pdf
NCEP065N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m
ncep065n10ak.pdf
NCEP065N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m
ncep065n10gu.pdf
http://www.ncepower.com NCEP065N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP065N10GU uses Super Trench II technology that is V =100V,I =90ADS Duniquely optimized to provide the most efficient high frequencyR =5.9m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R prod
ncep065n10.pdf
NCEP065N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
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