All MOSFET. NCEP065N10AGU Datasheet

 

NCEP065N10AGU MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP065N10AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6-8L

 NCEP065N10AGU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP065N10AGU Datasheet (PDF)

 ..1. Size:331K  ncepower
 ncep065n10agu.pdf

NCEP065N10AGU NCEP065N10AGU

http://www.ncepower.com NCEP065N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power

 2.1. Size:330K  ncepower
 ncep065n10ag.pdf

NCEP065N10AGU NCEP065N10AGU

NCEP065N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m

 3.1. Size:362K  ncepower
 ncep065n10ak.pdf

NCEP065N10AGU NCEP065N10AGU

NCEP065N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

 4.1. Size:767K  ncepower
 ncep065n10gu.pdf

NCEP065N10AGU NCEP065N10AGU

http://www.ncepower.com NCEP065N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP065N10GU uses Super Trench II technology that is V =100V,I =90ADS Duniquely optimized to provide the most efficient high frequencyR =5.9m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R prod

 4.2. Size:298K  ncepower
 ncep065n10.pdf

NCEP065N10AGU NCEP065N10AGU

NCEP065N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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