NCEP070N10AGU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP070N10AGU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
Paquete / Cubierta: DFN5X6-8L
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NCEP070N10AGU Datasheet (PDF)
ncep070n10agu.pdf
NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz
ncep070n10gu.pdf
NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati
ncep070n12.pdf
NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
ncep070n12 ncep070n12d.pdf
NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
Otros transistores... NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , NCEP068N10K , STP75NF75 , NCEP070N10GU , NCEP070N12 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK .
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