NCEP070N10AGU Datasheet. Specs and Replacement

Type Designator: NCEP070N10AGU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm

Package: DFN5X6-8L

NCEP070N10AGU substitution

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NCEP070N10AGU datasheet

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NCEP070N10AGU

NCEP070N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz... See More ⇒

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NCEP070N10AGU

NCEP070N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒

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 ncep070n12.pdf pdf_icon

NCEP070N10AGU

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26... See More ⇒

 5.2. Size:335K  ncepower
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NCEP070N10AGU

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26... See More ⇒

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Detailed specifications: NCEP065N10, NCEP065N10AG, NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, NCEP068N10K, 7N65, NCEP070N10GU, NCEP070N12, NCEP070N12D, NCEP072N10A, NCEP075N85AGU, NCEP075N85GU, NCEP078N10AG, NCEP078N10AK

Keywords - NCEP070N10AGU MOSFET specs

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