NCEP070N10AGU MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCEP070N10AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: DFN5X6-8L

NCEP070N10AGU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCEP070N10AGU Datasheet (PDF)

..1. Size:397K ncepower
ncep070n10agu.pdf

NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

4.1. Size:377K ncepower
ncep070n10gu.pdf

NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati

5.1. Size:335K ncepower
ncep070n12.pdf

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

5.2. Size:335K ncepower
ncep070n12 ncep070n12d.pdf