Справочник MOSFET. NCEP070N10AGU

 

NCEP070N10AGU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP070N10AGU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 105 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 315 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0094 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP070N10AGU

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP070N10AGU Datasheet (PDF)

 ..1. Size:397K  ncepower
 ncep070n10agu.pdf pdf_icon

NCEP070N10AGU

NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

 4.1. Size:377K  ncepower
 ncep070n10gu.pdf pdf_icon

NCEP070N10AGU

NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati

 5.1. Size:335K  ncepower
 ncep070n12.pdf pdf_icon

NCEP070N10AGU

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 5.2. Size:335K  ncepower
 ncep070n12 ncep070n12d.pdf pdf_icon

NCEP070N10AGU

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

ПОКАЗАТЬ ЕЩЁ

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History: SFF60P05Z | IRF821FI | AONT21313C | FQB11P06TM

 

 
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