FQB6N80 Todos los transistores

 

FQB6N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB6N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 158 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 31 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.95 Ohm
   Paquete / Cubierta: TO263 D2PAK
 

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FQB6N80 Datasheet (PDF)

 ..1. Size:1075K  fairchild semi
 fqb6n80 fqi6n80.pdf pdf_icon

FQB6N80

October 2008QFETFQB6N80 / FQI6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially

 0.1. Size:682K  fairchild semi
 fqb6n80tm.pdf pdf_icon

FQB6N80

September 2000TMQFETFQB6N80 / FQI6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especi

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQB6N80

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:596K  fairchild semi
 fqb6n90tm am002.pdf pdf_icon

FQB6N80

December 2000TMQFETQFETQFETQFETFQB6N90 / FQI6N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , 2SK3878 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , FQB8N60C , FCH072N60FF085 , FQB8P10 .

History: MSK2N60F

 

 
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