FQB6N80 - описание и поиск аналогов

October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially

September 2000 TM QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especi

December 2000 TM QFET QFET QFET QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology

November 2013 FQB6N40C N-Channel QFET MOSFET 400 V, 6 A, 1.0 Description Features These N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC) technology has been especially tailored to min

May 2000 TM QFET QFET QFET QFET FQB6N15 / FQI6N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology h

QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

October 2008 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially

May 2000 TM QFET QFET QFET QFET FQB6N25 / FQI6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology

April 2000 TM QFET QFET QFET QFET FQB6N70 / FQI6N70 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.2A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technolog

April 2000 TM QFET QFET QFET QFET FQB6N50 / FQI6N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur