FQB6N80 Specs and Replacement
Type Designator: FQB6N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
Package: TO263
D2PAK
- MOSFET ⓘ Cross-Reference Search
FQB6N80 datasheet
..1. Size:1075K fairchild semi
fqb6n80 fqi6n80.pdf 
October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially... See More ⇒
0.1. Size:682K fairchild semi
fqb6n80tm.pdf
September 2000 TM QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especi... See More ⇒
9.2. Size:596K fairchild semi
fqb6n90tm am002.pdf
December 2000 TM QFET QFET QFET QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology... See More ⇒
9.3. Size:756K fairchild semi
fqb6n40c.pdf
November 2013 FQB6N40C N-Channel QFET MOSFET 400 V, 6 A, 1.0 Description Features These N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC) technology has been especially tailored to min... See More ⇒
9.4. Size:759K fairchild semi
fqb6n15tm fqi6n15tu.pdf
May 2000 TM QFET QFET QFET QFET FQB6N15 / FQI6N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology h... See More ⇒
9.5. Size:681K fairchild semi
fqb6n60ctm fqi6n60ctu.pdf
QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to... See More ⇒
9.6. Size:842K fairchild semi
fqb6n60tm.pdf
October 2008 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially ... See More ⇒
9.7. Size:759K fairchild semi
fqb6n25tm.pdf
May 2000 TM QFET QFET QFET QFET FQB6N25 / FQI6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology ... See More ⇒
9.8. Size:797K fairchild semi
fqb6n70tm.pdf
April 2000 TM QFET QFET QFET QFET FQB6N70 / FQI6N70 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.2A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technolog... See More ⇒
9.9. Size:721K fairchild semi
fqb6n50 fqi6n50tu.pdf
April 2000 TM QFET QFET QFET QFET FQB6N50 / FQI6N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology ... See More ⇒
9.10. Size:892K onsemi
fqb6n40c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQB4N80, SDD02N60, FQB50N06, FQB50N06L, FQB55N10, SDD01N70, FQB5N50C, FQB5N90, 8205A, FCH104N60FF085, FQB7N60, FCPF2250N80Z, FQB7P20, FQB7P20TMF085, FQB8N60C, FCH072N60FF085, FQB8P10
Keywords - FQB6N80 MOSFET specs
FQB6N80 cross reference
FQB6N80 equivalent finder
FQB6N80 pdf lookup
FQB6N80 substitution
FQB6N80 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
