NCEP090N20T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP090N20T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 340 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 125 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 535 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-247

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NCEP090N20T datasheet

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NCEP090N20T

NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

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NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

 4.2. Size:1292K  ncepower
 ncep090n20d.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

 4.3. Size:1292K  ncepower
 ncep090n20.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

MOSTRAR MÁS

Otros transistores... NCEP082N10AS, NCEP085N10AS, NCEP088NH150GU, NCEP090N10AGU, NCEP090N10GU, NCEP090N12AGU, NCEP090N20, NCEP090N20D, AO4407A, NCEP090N85A, NCEP090N85AGU, NCEP090N85AQU, NCEP090N85GU, NCEP090N85QU, NCEP092N10AS, NCEP095N10, NCEP095N10A