NCEP090N20T Todos los transistores

 

NCEP090N20T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP090N20T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 125 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 535 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-247
 
   - Selección ⓘ de transistores por parámetros

 

NCEP090N20T Datasheet (PDF)

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 ncep090n20t.pdf pdf_icon

NCEP090N20T

NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 4.1. Size:1292K  ncepower
 ncep090n20 ncep090n20d.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1

 4.2. Size:1292K  ncepower
 ncep090n20d.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1

 4.3. Size:1292K  ncepower
 ncep090n20.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1

MOSTRAR MÁS

Otros transistores... NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , IRFP250 , NCEP090N85A , NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A .

 

 
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