NCEP090N20T datasheet, аналоги, основные параметры

Наименование производителя: NCEP090N20T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 340 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 125 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 38 ns

Cossⓘ - Выходная емкость: 535 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCEP090N20T

- подборⓘ MOSFET транзистора по параметрам

 

NCEP090N20T даташит

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 ncep090n20t.pdf pdf_icon

NCEP090N20T

NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

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 ncep090n20 ncep090n20d.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

 4.2. Size:1292K  ncepower
 ncep090n20d.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

 4.3. Size:1292K  ncepower
 ncep090n20.pdf pdf_icon

NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1

ПОКАЗАТЬ ЕЩЁ

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