NCEP090N20T - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP090N20T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 340 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 125 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 535 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO-247
Аналог (замена) для NCEP090N20T
NCEP090N20T Datasheet (PDF)
ncep090n20t.pdf

NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep090n20 ncep090n20d.pdf

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n20d.pdf

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n20.pdf

NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
Другие MOSFET... NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , 2N7002 , NCEP090N85A , NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A .
History: NCEP25N10AD | NCEP6016AS | NCEP095N10AG | NCEP6035AG | NP60N055KUG | NCEP090N85QU | NTB150N65S3HF
History: NCEP25N10AD | NCEP6016AS | NCEP095N10AG | NCEP6035AG | NP60N055KUG | NCEP090N85QU | NTB150N65S3HF



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