NCEP090N20T Datasheet. Specs and Replacement

Type Designator: NCEP090N20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 535 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-247

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NCEP090N20T datasheet

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NCEP090N20T

NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒

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NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1... See More ⇒

 4.2. Size:1292K  ncepower
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NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1... See More ⇒

 4.3. Size:1292K  ncepower
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NCEP090N20T

NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1... See More ⇒

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Detailed specifications: NCEP082N10AS, NCEP085N10AS, NCEP088NH150GU, NCEP090N10AGU, NCEP090N10GU, NCEP090N12AGU, NCEP090N20, NCEP090N20D, AON7506, NCEP090N85A, NCEP090N85AGU, NCEP090N85AQU, NCEP090N85GU, NCEP090N85QU, NCEP092N10AS, NCEP095N10, NCEP095N10A

Keywords - NCEP090N20T MOSFET specs

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