NCEP10N85AQ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP10N85AQ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DFN3.3X3.3-8L

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NCEP10N85AQ datasheet

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NCEP10N85AQ

http //www.ncepower.com NCEP10N85AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss

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NCEP10N85AQ

http //www.ncepower.com NCEP10N85AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss

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 ncep10n12 ncep10n12d.pdf pdf_icon

NCEP10N85AQ

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

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NCEP10N85AQ

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

MOSTRAR MÁS

Otros transistores... NCEP095N10A, NCEP095N10AG, NCEP10N12, NCEP10N12AK, NCEP10N12D, NCEP10N12G, NCEP10N12K, NCEP10N85AG, 20N50, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU, NCEP1212AS, NCEP1214AS, NCEP1216AS