NCEP10N85AQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP10N85AQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: DFN3.3X3.3-8L
Búsqueda de reemplazo de NCEP10N85AQ MOSFET
NCEP10N85AQ Datasheet (PDF)
ncep10n85aq.pdf

http://www.ncepower.com NCEP10N85AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss
ncep10n85ag.pdf

http://www.ncepower.com NCEP10N85AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss
ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@
ncep10n12ak.pdf

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination
Otros transistores... NCEP095N10A , NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , 2N60 , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS .
History: STB22NS25ZT4 | IRLU2705PBF | IRF7313PBF-1 | SIS402DN
History: STB22NS25ZT4 | IRLU2705PBF | IRF7313PBF-1 | SIS402DN



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