NCEP10N85AQ - параметры транзистора MOSFET, его аналоги, datasheet

NCEP10N85AQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NCEP10N85AQ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: DFN3.3X3.3-8L

Аналог (замена) для NCEP10N85AQ

NCEP10N85AQ Datasheet (PDF)

..1. Size:320K ncepower
ncep10n85aq.pdf

http://www.ncepower.com NCEP10N85AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss

4.1. Size:329K ncepower
ncep10n85ag.pdf

http://www.ncepower.com NCEP10N85AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss

7.1. Size:417K ncepower
ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

7.2. Size:729K ncepower
ncep10n12ak.pdf

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

7.3. Size:937K ncepower
ncep10n12k.pdf

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

7.4. Size:409K ncepower
ncep10n12g.pdf

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

7.5. Size:417K ncepower
ncep10n12.pdf