NCEP10N85AQ Datasheet. Specs and Replacement

Type Designator: NCEP10N85AQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN3.3X3.3-8L

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NCEP10N85AQ datasheet

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NCEP10N85AQ

http //www.ncepower.com NCEP10N85AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss... See More ⇒

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NCEP10N85AQ

http //www.ncepower.com NCEP10N85AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss... See More ⇒

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 ncep10n12 ncep10n12d.pdf pdf_icon

NCEP10N85AQ

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@... See More ⇒

 7.2. Size:729K  ncepower
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NCEP10N85AQ

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination ... See More ⇒

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Detailed specifications: NCEP095N10A, NCEP095N10AG, NCEP10N12, NCEP10N12AK, NCEP10N12D, NCEP10N12G, NCEP10N12K, NCEP10N85AG, IRF1405, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU, NCEP1212AS, NCEP1214AS, NCEP1216AS

Keywords - NCEP10N85AQ MOSFET specs

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