NCEP11N10AS Todos los transistores

 

NCEP11N10AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP11N10AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de NCEP11N10AS MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP11N10AS datasheet

 ..1. Size:302K  ncepower
 ncep11n10as.pdf pdf_icon

NCEP11N10AS

NCEP11N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 4.1. Size:717K  ncepower
 ncep11n10aqu.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5V DS(ON

 4.2. Size:363K  ncepower
 ncep11n10ak.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 4.3. Size:333K  ncepower
 ncep11n10agu.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

MOSTRAR MÁS

Otros transistores... NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , IRFZ24N , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK .

History: BF1101

 

 
Back to Top

 


 
.