NCEP11N10AS datasheet, аналоги, основные параметры

Наименование производителя: NCEP11N10AS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 230 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: SOP8

Аналог (замена) для NCEP11N10AS

- подборⓘ MOSFET транзистора по параметрам

 

NCEP11N10AS даташит

 ..1. Size:302K  ncepower
 ncep11n10as.pdf pdf_icon

NCEP11N10AS

NCEP11N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 4.1. Size:717K  ncepower
 ncep11n10aqu.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5V DS(ON

 4.2. Size:363K  ncepower
 ncep11n10ak.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 4.3. Size:333K  ncepower
 ncep11n10agu.pdf pdf_icon

NCEP11N10AS

http //www.ncepower.com NCEP11N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP10N12D, NCEP10N12G, NCEP10N12K, NCEP10N85AG, NCEP10N85AQ, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, IRFZ24N, NCEP11N12AGU, NCEP1212AS, NCEP1214AS, NCEP1216AS, NCEP1250AK, NCEP1260F, NCEP1278, NCEP1290AK