All MOSFET. NCEP11N10AS Datasheet

 

NCEP11N10AS Datasheet and Replacement


   Type Designator: NCEP11N10AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP8
 

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NCEP11N10AS Datasheet (PDF)

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NCEP11N10AS

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

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NCEP11N10AS

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

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NCEP11N10AS

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

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NCEP11N10AS

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

Datasheet: NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , AON6380 , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK .

History: NCE2323 | SFG10R10BF

Keywords - NCEP11N10AS MOSFET datasheet

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