NCEP1570GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1570GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: DFN5X6-8L
- Selección de transistores por parámetros
NCEP1570GU Datasheet (PDF)
ncep1570gu.pdf

http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1570 ncep1570d.pdf

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570d.pdf

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570.pdf

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IRFR120TR | 4N65KG-T60-K | MRF5003 | CSD17309Q3 | AONS36316
History: IRFR120TR | 4N65KG-T60-K | MRF5003 | CSD17309Q3 | AONS36316



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