NCEP1570GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1570GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: DFN5X6-8L
Búsqueda de reemplazo de NCEP1570GU MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP1570GU datasheet
ncep1570gu.pdf
http //www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1570GU uses Super Trench technology that is V =150V,I =70A DS D uniquely optimized to provide the most efficient high R =13.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching
ncep1570 ncep1570d.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570d.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
Otros transistores... NCEP13N10AS, NCEP1505S, NCEP1520AK, NCEP1520BK, NCEP1520G, NCEP1545A, NCEP1545AG, NCEP1545AK, IRFZ44N, NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK, NCEP15T10V, NCEP15T14LL, NCEP15T14T
History: OSG65R108HSZF
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASDM40N60KQ | ASDM40N40E | ASDM40N100P | ASDM40DN20E | ASDM3416EZA | ASDM3415ZA | ASDM3401ZA | ASDM3401 | ASDM3400ZA | ASDM30P30BE | RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ
Popular searches
2n3773 | b772 transistor | 50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent | d882 transistor
