NCEP1570GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP1570GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.8 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: DFN5X6-8L

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NCEP1570GU datasheet

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NCEP1570GU

http //www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1570GU uses Super Trench technology that is V =150V,I =70A DS D uniquely optimized to provide the most efficient high R =13.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

 6.1. Size:316K  ncepower
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NCEP1570GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 6.2. Size:316K  ncepower
ncep1570d.pdf pdf_icon

NCEP1570GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 6.3. Size:316K  ncepower
ncep1570.pdf pdf_icon

NCEP1570GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

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