All MOSFET. NCEP1570GU Datasheet

 

NCEP1570GU Datasheet and Replacement


   Type Designator: NCEP1570GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN5X6-8L
 

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NCEP1570GU Datasheet (PDF)

 ..1. Size:987K  ncepower
 ncep1570gu.pdf pdf_icon

NCEP1570GU

http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 6.1. Size:316K  ncepower
 ncep1570 ncep1570d.pdf pdf_icon

NCEP1570GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 6.2. Size:316K  ncepower
 ncep1570d.pdf pdf_icon

NCEP1570GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 6.3. Size:316K  ncepower
 ncep1570.pdf pdf_icon

NCEP1570GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

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Datasheet: NCEP13N10AS , NCEP1505S , NCEP1520AK , NCEP1520BK , NCEP1520G , NCEP1545A , NCEP1545AG , NCEP1545AK , IRFZ44N , NCEP1575GU , NCEP1580D , NCEP1580GU , NCEP15P30A , NCEP15P30AK , NCEP15T10V , NCEP15T14LL , NCEP15T14T .

History: STK7002 | HSBB8008 | R8008ANJ | WMR12N03T1 | HSBA6016 | 1N80 | HSM1564

Keywords - NCEP1570GU MOSFET datasheet

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