NCEP1570GU datasheet, аналоги, основные параметры
Наименование производителя: NCEP1570GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 280 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP1570GU
- подборⓘ MOSFET транзистора по параметрам
NCEP1570GU даташит
ncep1570gu.pdf
http //www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1570GU uses Super Trench technology that is V =150V,I =70A DS D uniquely optimized to provide the most efficient high R =13.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching
ncep1570 ncep1570d.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570d.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1570.pdf
http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
Другие IGBT... NCEP13N10AS, NCEP1505S, NCEP1520AK, NCEP1520BK, NCEP1520G, NCEP1545A, NCEP1545AG, NCEP1545AK, IRFZ44N, NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK, NCEP15T10V, NCEP15T14LL, NCEP15T14T
History: RJK0851DPB
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