NCEP15T26LL Datasheet. Equivalente

 ..1. Size:727K  ncepower
 ncep15t26ll.pdf

http //www.ncepower.com NCEP15T26LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =255A DS D switching performance. Both conduction and switching power R =4.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

 7.1. Size:372K  ncepower
 ncep15t14ll.pdf

http //www.ncepower.com NCEP15T14LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre

 7.2. Size:386K  ncepower
 ncep15t14d.pdf

Pb Free Product http //www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 7.3. Size:680K  ncepower
 ncep15t10v.pdf

http //www.ncepower.com NCEP15T10V NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP15T10V uses Super Trench technology that is V =150V,I =100A DS D uniquely optimized to provide the most efficient high R =5.7m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

 7.4. Size:354K  ncepower
 ncep15t14.pdf

Pb Free Product http //www.ncepower.com NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f

 7.5. Size:802K  ncepower
 ncep15t18t.pdf

http //www.ncepower.com NCEP15T18T NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =180A DS D switching performance. Both conduction and switching power R =4.45m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

 7.6. Size:2049K  ncepower
 ncep15t14t.pdf

http //www.ncepower.com NCEP15T14T NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switchi