NCEP15T26LL Datasheet: MOSFET, N-Ch, 150V, 255A. Full specification with pinout and replacement list

NCEP15T26LL Datasheet. Specs and Replacement

Type Designator: NCEP15T26LL 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 690 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 255 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: TOLL-8L

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NCEP15T26LL datasheet

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http //www.ncepower.com NCEP15T26LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =255A DS D switching performance. Both conduction and switching power R =4.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒

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http //www.ncepower.com NCEP15T14LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre... See More ⇒

7.2. Size:386K ncepower
ncep15t14d.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒

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http //www.ncepower.com NCEP15T10V NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP15T10V uses Super Trench technology that is V =150V,I =100A DS D uniquely optimized to provide the most efficient high R =5.7m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching... See More ⇒