NCEP15T26LL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP15T26LL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 690 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 255 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 97 nC
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 890 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
Тип корпуса: TOLL-8L
Аналог (замена) для NCEP15T26LL
NCEP15T26LL Datasheet (PDF)
ncep15t26ll.pdf
http://www.ncepower.com NCEP15T26LLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =255ADS Dswitching performance. Both conduction and switching power R =4.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep15t14ll.pdf
http://www.ncepower.com NCEP15T14LLNCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre
ncep15t14d.pdf
Pb Free Producthttp://www.ncepower.com NCEP15T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep15t10v.pdf
http://www.ncepower.com NCEP15T10VNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP15T10V uses Super Trench technology that isV =150V,I =100ADS Duniquely optimized to provide the most efficient highR =5.7m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep15t14.pdf
Pb Free Producthttp://www.ncepower.com NCEP15T14NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f
ncep15t18t.pdf
http://www.ncepower.com NCEP15T18TNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =180ADS Dswitching performance. Both conduction and switching power R =4.45m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep15t14t.pdf
http://www.ncepower.com NCEP15T14TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP15T14T uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchi
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Список транзисторов
Обновления
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