NCEP18N10AR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP18N10AR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 37.6 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 147.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOT-223

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NCEP18N10AR Datasheet (PDF)

..1. Size:294K ncepower
ncep18n10ar.pdf

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

4.1. Size:735K ncepower
ncep18n10ak.pdf

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

4.2. Size:326K ncepower
ncep18n10aq.pdf

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

4.3. Size:874K ncepower
ncep18n10ag.pdf

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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