Справочник MOSFET. NCEP18N10AR

 

NCEP18N10AR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP18N10AR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 147.4 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для NCEP18N10AR

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP18N10AR Datasheet (PDF)

 ..1. Size:294K  ncepower
 ncep18n10ar.pdf pdf_icon

NCEP18N10AR

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 4.1. Size:735K  ncepower
 ncep18n10ak.pdf pdf_icon

NCEP18N10AR

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

 4.2. Size:326K  ncepower
 ncep18n10aq.pdf pdf_icon

NCEP18N10AR

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 4.3. Size:874K  ncepower
 ncep18n10ag.pdf pdf_icon

NCEP18N10AR

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP15T14LL , NCEP15T14T , NCEP15T18T , NCEP15T26LL , NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , NCEP18N10AQ , 10N60 , NCEP2390 , NCEP2390D , NCEP25N10AD , NCEP25N10AG , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU , NCEP3045GU .

 

 
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