NCEP18N10AR Datasheet and Replacement
Type Designator: NCEP18N10AR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 147.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT-223
NCEP18N10AR substitution
NCEP18N10AR Datasheet (PDF)
ncep18n10ar.pdf

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l
ncep18n10ak.pdf

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
ncep18n10aq.pdf

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo
ncep18n10ag.pdf

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
Datasheet: NCEP15T14LL , NCEP15T14T , NCEP15T18T , NCEP15T26LL , NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , NCEP18N10AQ , 10N60 , NCEP2390 , NCEP2390D , NCEP25N10AD , NCEP25N10AG , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU , NCEP3045GU .
History: 1N60F | STB10LN80K5 | IRF823FI | SML30B48 | IRHQ7110 | SWK15P03 | SSI4N90A
Keywords - NCEP18N10AR MOSFET datasheet
NCEP18N10AR cross reference
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NCEP18N10AR replacement
History: 1N60F | STB10LN80K5 | IRF823FI | SML30B48 | IRHQ7110 | SWK15P03 | SSI4N90A



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