NCEP18N10AR Datasheet. Specs and Replacement

Type Designator: NCEP18N10AR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V

Qg ⓘ - Total Gate Charge: 37.6 nC

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 147.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT-223

NCEP18N10AR substitution

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NCEP18N10AR datasheet

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NCEP18N10AR

http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l... See More ⇒

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NCEP18N10AR

http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON) ... See More ⇒

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NCEP18N10AR

http //www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo... See More ⇒

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NCEP18N10AR

http //www.ncepower.com NCEP18N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AG uses Super Trench II technology that is V =100V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON) ... See More ⇒

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Detailed specifications: NCEP15T14LL, NCEP15T14T, NCEP15T18T, NCEP15T26LL, NCEP16N85AK, NCEP18N10AG, NCEP18N10AK, NCEP18N10AQ, IRFP260N, NCEP2390, NCEP2390D, NCEP25N10AD, NCEP25N10AG, NCEP25N10AQ, NCEP25ND10AG, NCEP3045BGU, NCEP3045GU

Keywords - NCEP18N10AR MOSFET specs

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