NCEP2390 Datasheet. Equivalente

 ..1. Size:332K  ncepower
 ncep2390.pdf

Pb Free Product http //www.ncepower.com NCEP2390 NCE N-Channel Super Trench Power MOSFET Description The NCEP2390 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 0.1. Size:309K  ncepower
 ncep2390d.pdf

Pb Free Product http //www.ncepower.com NCEP2390D NCE N-Channel Super Trench Power MOSFET Description The NCEP2390D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.1. Size:957K  ncepower
 ncep25nd10ag.pdf

http //www.ncepower.com NCEP25ND10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS

 9.2. Size:751K  ncepower
 ncep25n10ad.pdf

http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS

 9.3. Size:304K  ncepower
 ncep25n10aq.pdf

http //www.ncepower.com NCEP25N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 9.4. Size:321K  ncepower
 ncep25n10ag.pdf

http //www.ncepower.com NCEP25N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

 9.5. Size:367K  ncepower
 ncep25n10ak.pdf

http //www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses