NCEP2390 datasheet, аналоги, основные параметры

Наименование производителя: NCEP2390

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 230 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26 ns

Cossⓘ - Выходная емкость: 333.1 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0155 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP2390

- подборⓘ MOSFET транзистора по параметрам

 

NCEP2390 даташит

 ..1. Size:332K  ncepower
 ncep2390.pdf pdf_icon

NCEP2390

Pb Free Product http //www.ncepower.com NCEP2390 NCE N-Channel Super Trench Power MOSFET Description The NCEP2390 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

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 ncep2390d.pdf pdf_icon

NCEP2390

Pb Free Product http //www.ncepower.com NCEP2390D NCE N-Channel Super Trench Power MOSFET Description The NCEP2390D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.1. Size:957K  ncepower
 ncep25nd10ag.pdf pdf_icon

NCEP2390

http //www.ncepower.com NCEP25ND10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS

 9.2. Size:751K  ncepower
 ncep25n10ad.pdf pdf_icon

NCEP2390

http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS

ПОКАЗАТЬ ЕЩЁ

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